Publications


Linearity Enhancement for GaN HEMT Amplifier using Parallel Transistors with Independent Gate Bias Control

Kanika Saini, Sanjay Raman, Amin K. Ezzeddine, Ho C Huang: Linearity Enhancement for GaN HEMT Amplifier using Parallel Transistors with Independent Gate Bias Control.

GaN HEMTs have high output power density and high efficiency over wide bandwidth. But the linearity of GaN HEMT is typically worse than that of a GaAs device. This paper presents a simple methology to improve the linearity of GaN HEMT. The proposed method is to split the device into multiple sub-cells in parallel with independently controlled gate bias voltages and then power combine the sub-cell outputs. A prototype amplifier...Read More or Explore Presentation


High-Power GaN MMIC PA Over 40-4000MHz

Amin Ezzeddine, H. Alfred Hung, Ed Viveiros, Ho-Chung Huang: High-Power GaN MMIC PA Over 40-4000MHz.

We report a high-performance GaN MMIC power amplifier operating from 40MHz to 4,000MHz. The MMIC achieved 80W pulsed (100us pulse width and 10% duty cycle) output power (P5dB) with 54% efficiency at 40MHz, 50W with about 30% efficiency across most of the mid band, and gradually decreases to 30W with 22% efficiency at 4000MHz. Power gain is 25dB across the 40-4000MHz band. This ultra wideband performance is achieved by...Read More


Ultra Wide-Band, High-Power, High-Efficiency GaN Amplifier

Amin Ezzeddine, H. Alfred Hung, Ed Viveiros, Ho-Chung Huang: Ultra Wide-Band, High-Power, High-Efficiency GaN Amplifier.

We report a high-performance GaN amplifier operating from 100MHz to 3,000MHz. The best results included 100W output power, 22dB gain with 40% poweradded-efficiency from 100MHz to 3,000MHz. This performance is achieved by...Read More


UHiFET – A New High-Frequency High-Voltage Device

A. K. Ezzeddine, H. C. Huang and J. L. Singer, "UHiFET - A New High-Frequency High-Voltage Device"

The HiFET (High-Impedance, High-Voltage FET) configuration is used to connect several semiconductor FETs both DC and RF in series, resulting in high DC bias voltage and high output impedance. The HiFET power and efficiency degrades at high microwave frequencies (i.e. > 3GHz) due to gate leakage currents. In this article, we propose a new configuration, the Universal HiFET (UHiFET), which uses...Read More or Explore Presentation


A Mirror Predistortion Linear Power Amplifier

K. Fayed, A. Zaghloul, A. K. Ezzeddine, and H. C. Huang, "A Mirror Predistortion Linear Power Amplifier"

We propose a new type of predistortion linearization technique: “Mirror Predistortion”. In a regular predistortion power amplifier (PA), the AM-AM and AM-PM distortion (Or IMD3, Third Order Inter-modulation Distortion, and IMD5) of the PA are not known before measurement. In the Mirror Predistortion technique, we choose a PA with identical design as, but smaller than the main PA, as a Mirror Predistorter (PD). Since this Mirror PD’s nonlinear characteristics tracks the main PA, there is no need for nonlinear...Read More or Explore Presentation


Introduction to MMIC Technology

Presentation by Amin K. Ezzeddine

MIC Advantages include Fast & Low Cost Development, Better Performance such as: NF, Efficiency, P1dB, a Variety of Dielectric Materials Integration of Different Semiconductor Technologies: MESFETs, Bipolar, Pin Diodes, Digital…etc Higher Levels of Integration is possible. While MMIC Advantages include...Read More


Broadband MMIC Power Amplifier for Multiple Wireless Systems

By A. K. Ezzeddine and H. C. Huang

We report the successful development of a broadband, high-linearity MMIC PA. This single PA is useful for multiple wireless systems including satellite mobile ground terminal, GPS transmitter, WiFi repeater, and WiMAX repeater applications. Using GaAs MESFET technology, we connect two 12mm FET unit cells both RF and DC in series (HIFET) to achieve a total gate width of 24mm. This way, the DC bias voltage is doubled from 7V to 14V. Because the 12mm FET’s optimum output impedance is about 6 ohms, a single conventional 24mm FET’s optimum output impedance will be about 3 ohms. The 2HIFET output optimum impedance is twice that of a 12mm FET, which is...Read More or Explore the Presentation


Three Dimensional Transmission Lines and Power Divider Circuits

By Ali Darwish & Amin Ezzeddine

We report the development of a number of novel broadband 3D circuits. We present the performance of a 3D X-band 4-way Wilkinson Divider. Excellent performance is also obtained from a delay line, and broadband coupled lines. We also introduce, for...Read More


10W Ultra-Broadband Power Amplifier

By A. K. Ezzeddine and H. C. Huang

We report the design and performance of an ultra-broadband power amplifier. It achieves 10 Watts output power with 21dB ± 1.5dB gain from 20 MHz to 3000 MHz. At lower frequencies from 20 to 1000 MHz the output power is 15 Watts with 22% efficiency. To achieve this performance, we employ a new design concept to...Read More or Explore the Presentation


Advances in Microwave & Millimeter-wave Integrated Circuits

By Amin K. Ezzeddine

This tutorial paper reports on the state-of-the-art of Monolithic Microwave Integrated Circuits (MMIC) technology. The paper gives an overview of available MMIC semiconductor materials, devices, processes and outlines the steps of a typical MMIC manufacturing process followed by...Read More or Explore the Presentation


CMOS PA For Wireless Applications

By A. K. Ezzeddine, H.C. Huang, R. S. Howell, H. C. Nathanson and N. G. Paraskevopoulos

The purpose of this work is to investigate the feasibility of using CMOS PA for wireless communications such as cell phone, WiFi and WiMAX. Our result indicates that we have successfully...Read More or Explore the Presentation


Ultra-Broadband GaAs HIFET MMIC PA

By A. K. Ezzeddine and H. C. Huang

This paper reports the first MMIC using the HIFET (High-Voltage, High-Impedance FET) concept with very broadband power performance and small die size. This GaAs MMIC power amplifier has a gain of 21dB ± 1dB and over 2W of P1dB over the entire 30 MHz to 2.5 GHz frequency band with 20% efficiency, at a bias voltage of +20V. We believe that this is the first MMIC ever...Read More or Explore the Presentation


The High Voltage/High Power FET (HiVP)

By A. K. Ezzeddine and H. C. Huang

A new device configuration is presented: The High-Voltage/High-Power device (HiVP). This original configuration can dramatically improve the power and decrease the complexity of designing power amplifiers, leading to low cost and higher power. The HiVP uses a new concept, never achieved before, to...Read More or Explore the Presentation


Ku-Band MMIC's in Low-Cost, SMT Compatible Packages

By H. C. Huang, A. K. Ezzeddine, A. Darwish, B. Hsu, J. Williams and S. Peak

A new device configuration is presented: The High-Voltage/High-Power device (HiVP). This original configuration can dramatically improve the power and decrease the complexity of designing power amplifiers, leading to low cost and higher power. The HiVP uses a new concept, never achieved before, to...Read More


Vertical Balun and Wilkinson Divider

By A. Darwish, A. K. Ezzeddine, H. C. Huang, K. Bumman, L. Joonyoul, Y. Sungwhan, M. Mah, and J. Cook

We report the development of a novel broadband 3D vertical balun exhibiting superior performance due to ground plane removal and unique 3D features. The balun offers ± 5 degrees phase and ± 0.5 dB amplitude imbalance, from 2.0 ñ 2.7 GHz. In addition we...Read More


PATENT: High power high impedance microwave devices for power applications.

By A. K. Ezzeddine and H. C. Huang

Simplified, efficient multiple-transistor power amplifiers...Read More