A new device configuration is presented: The High-Voltage/High-Power device (HiVP). This original configuration can dramatically improve the power and decrease the complexity of designing power amplifiers, leading to low cost and higher power. The HiVP uses a new concept, never achieved before, to simultaneously bias a semiconductor device at high voltage while maintaining an optimum output matching impedance close to 50 Ohms. The concept could be applied to many device technologies such as the GaAs MESFET, HEMT, and the Silicon MOSFET, to combine the power of several devices to achieve higher power output over broader bandwidth.
HiVP6.pdf
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