This paper reports the first MMIC using the High-Voltage/High Power concept with very broadband power performance. This GaAs MMIC power amplifier has a flat gain of 22dB and over 3W of saturated power over the entire 20 MHz to 2.5 GHz frequency band with 20% efficiency. This performance is achieved using a 2-stage MMIC incorporating an innovative HiVP configuration into the design of both the driver- and power-stage devices. The MMIC uses +20V for both the first and second drain bias and negative voltages for the gates. This is the first MMIC ever reported, which achieves the combination of such broadband performance with 3W output powerand 20%efficiency.
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