AM120MH2-BI-R

AMCOM’s AM120MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total device periphery of 24mm. The AM120MH2-BI-R is designed for high power microwave applications, operating up to 6GHz. The BI series uses a specially designed ceramic package with straight leads in a drop- in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground, and thermal path. This HiFET is RoHS compliant.