Discrete Power GaN HEMTs

AM100WN-CU-R

AMCOM’s AM100WN-CU-R is part of the CU series of GaN/SiC HEMTs. This part has a total gate width of 10mm.The AM100WN-CU-R is designed for high power microwave applications, operating up to 6GHz.The CU series is a specially designed ceramic package with straight leads and flange in a drop-in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground and thermal path. This part is RoHS compliant.


General Parameters:
Freq (GHz): DC
Fmax (GHz): 6
Gain (dB): 14
P1dB (dBm): 44.5
Psat (dBm): 46
Bias (V): +28 / -2
Package: Flange
ECCN: EAR99
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