Discrete Power GaN HEMTs

AM100WN-00-R

Datasheet

AMCOM’s AM100WN-00-R is a discrete GaN/SiC HEMT that has a total gate width of 10mm (Eight 1.25mm FETs in parallel). It is a bare die which can be operated up to 15 GHz. It can provide a typically saturated power of 46.1 dBm. This part is RoHS compliant.


Product Specifications

General Parameters:
Freq (GHz): DC
Fmax (GHz): 15
Gain (dB): 19
P1dB (dBm): 44.5
Psat (dBm): 46.1
Bias (V): +28 / -2
Package: Die
ECCN: 3A001.b.3
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