Discrete Power GaN HEMTs

AM050WN-00-R

Datasheet

AMCOM’s AM050WN-00-R is a discrete GaN/SiC HEMT that has a total gate width of 5mm (Four 1.25mm FETs in parallel). It is a bare die which can be operated up to 15 GHz. It can provide a typically saturated power of 43.3 dBm. This part is RoHS compliant.


Product Specifications

General Parameters:
Freq (GHz): DC
Fmax (GHz): 15
Gain (dB): 20
P1dB (dBm): 41.7
Psat (dBm): 43.3
Bias (V): +28 / -2
Package: Die
ECCN: 3A001.b.3
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