GaAs pHEMTs

AM030WH4-BI-R

AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This part has a total device periphery of 12mm. The AM030WH4-BI-R is designed for high power microwave applications, operating up to 6GHz. The BI series uses a specially designed ceramic package with straight or bent leads and flange in a drop-in mounting style. The regular BI package has straight leads and the “G” version has bent leads for SMT assembly. The flange at the bottom of the package serves simultaneously as DC ground, RF ground and thermal path. This HiFET is RoHS compliant.


General Parameters:
Freq (GHz): DC
Fmax (GHz): 6
Gain (dB): 21
P1dB (dBm): 37
IP3 (dBm): 37
Bias (V): +28 / -0.7
Package: SMT
ECCN: EAR99
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