GaAs pHEMTs

AM030WH2-BI-R

AMCOM’s AM030WH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total device periphery of 6mm (Two 3mm FETs in series). The AM030WH2-BI-R is designed for high power microwave applications, operating up to 12 GHz. It is also an ideal driver for larger power devices. The BI series uses a specially designed ceramic package with bent (BI-G) or straight (BI) leads in a drop-in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground, and thermal path. This part is RoHS compliant.


General Parameters:
Freq (GHz): DC
Fmax (GHz): 12
Gain (dB): 18
P1dB (dBm): 34.5
IP3 (dBm): 36
Bias (V): +14 / -0.7
Package: SMT
ECCN: EAR99
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