AMCOM’s AM030MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This part has a total device periphery of 12mm. The AM030MH4-BI-R is designed for high power microwave applications, operating up to 3GHz. The BI series uses a specially designed ceramic package with bent or straight leads and flange in a drop-in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground and thermal path. This HiFET is RoHS compliant.
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