Discrete Power GaN HEMTs

AM025WN-00-R

Datasheet

AMCOM’s AM025WN-00-R is a discrete GaN/SiC HEMT that has a total gate width of 2.5mm (Two 1.25mm FETs in parallel). It is a bare die which can be operated up to 15 GHz. It can provide a typically saturated power of 40.5 dBm. This part is RoHS compliant.



Product Specifications

General Parameters:
Freq (GHz): DC
Fmax (GHz): 15
Gain (dB): 21
P1dB (dBm): 38.9
Psat (dBm): 40.5
Bias (V): +28 / -2
Package: Die
ECCN: EAR99
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