AMCOM’s AM010WH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total device periphery of 2mm (Two 1mm FETs in series). The AM010WH2-BI-R is designed for medium power microwave applications, operating up to 12 GHz. It is also an ideal driver for larger power devices. The BI series uses a specially designed ceramic package with bent (BI-G) or straight (BI) leads in a drop-in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground, and thermal path. This part is RoHS compliant.
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