Discrete Power GaN HEMTs

AM005WN-00-R

Datasheet

AMCOM’s AM005WN-00-R is a discrete GaN/SiC HEMT that has a total gate width of 0.5mm. It is a bare die which can be operated up to 18 GHz. It can provide a typically saturated power of 33.4 dBm. It can be used in low noise, high dynamic range receiver and as driver to high power transmitter. This part is RoHS compliant.


Product Specifications

General Parameters:
Freq (GHz): DC
Fmax (GHz): 18
Gain (dB): 23
P1dB (dBm): 32
Psat (dBm): 33.4
Bias (V): +28 / -2
Package: Die
ECCN: EAR99
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