GaAs FETs

AM005MH2-BI-R

AMCOM’s AM005MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total device periphery of 1mm. The AM005MH2-BI-R is designed for high power microwave applications, operating up to 6 GHz. It is also an ideal driver for larger power devices. The BI series uses a specially designed ceramic package with bent or straight leads in a drop-in mounting style. The flange at the bottom of the package serves simultaneously as DC ground, RF ground, and thermal path. This part is RoHS compliant.


General Parameters:
Freq (GHz): DC
Fmax (GHz): 6
Gain (dB): 15
P1dB (dBm): 25
IP3 (dBm): 40
Bias (V): +14 / -1
Package: SMT
ECCN: EAR99
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