Linearity Enhancement for GaN HEMT Amplifier using Parallel Transistors with Independent Gate Bias Control

• February 06, 2022 Kanika Saini, Amin Ezzeddine, Waleed Joudeh, Ho Huang, Sanjay Raman

GaN HEMTs have high output power density and high efficiency over wide bandwidth. But the linearity of GaN HEMT is typically worse than that of a GaAs device. This paper presents a simple methology to improve the linearity of GaN HEMT. The proposed method is to split the device into multiple sub-cells in parallel with independently controlled gate bias voltages and then power combine the sub-cell outputs. 

Paper_S Band GaN LNA.pdf