The purpose of this work is to investigate the feasibility of using CMOS PA for wireless communications such as cell phone, WiFi and WiMAX. Our result indicates that we have successfully demonstrated this feasibility.
CMOS is a good candidate for the wireless communication because it is the natural choice for base band, IF and receiver. If it can also serve as PA, it is possible to achieve large-scale integration to reduce the cost, size and weight of the communication hardware. The major difficulty for CMOS PA is to achieve high power at high frequencies. This is because at high frequencies, CMOS has low DC bias voltage of only about 2 volts. This low DC bias voltage has 2 effects: 1) Relatively low RF output power because of low DC input power for any reasonable value of DC current. 2) The optimum RF impedance is proportional to Vdc/Idc. Low DC voltage leads to low RF impedance, which is very difficult to match to 50 ohms without substantial loss. Furthermore, silicon substrate is usually conductive, which results in substantial additional loss at RF frequencies.
Abstract PA Wireless _HIFET_.pdf
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