PROVEN 25 YEAR TRACK RECORD

AMCOM has committed substantial resources to better serve our customers looking for custom design solutions. Our highly trained staff of RF engineers are experts at custom designing hybrid circuits with output power from a few watts to hundreds of watts, frequencies from 1MHz - 40GHz with RF and DC connectors, which are ready to be inserted into your system, Module, SMT, or drop-in carrier package,including single DC voltage biasing, voltage regulation, temperature compensation, RF signal detection, self-protection circuitry, etc.. 

 Our engineers' design experience includes over 150 successfully developed power modules. We also custom design MMIC circuit power amplifiers, low noise amplifiers, phase shifters, attenuators, up converters, down-converters, and switches. We utilize smart compact design in ceramic or plastic packages in frequencies up to 40GHz. Our design team has successfully developed over 125 MMIC circuits. Let us assist you in solving your custom design requirements.

SATSHOW 2024 - Washington DC 

Since 1981, SATELLITE has been pivotal in forging the path forward for the space & satellite communities. The speed of the industry’s growth is accelerating, making each year a must-attend event.

Exhibition: March 19-21, 2024

IMS SHOW 2024 - Washington DC

IMS is the flagship event in a week dedicated to all things microwaves and RF. The week also includes the IEEE MTT-S Radio Frequency Integrated Circuits Symposium (RFIC) and the Automatic Radio Frequency Techniques Group (ARFTG).

Exhibition: June 18-20, 2024 


A Linear Simulation Technique for a Power Traveling-Wave Amplifier

A Linear Simulation Technique for a Power Traveling-Wave Amplifier

This Paper discusses a simple linear simulation technique to optimize the design of a traveling-wave amplifier (TWA) for best power and efficiency ...
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Computer-aided design methodology for linearity enhancement of multiwatt GaN HEMT amplifiers using multiple parallel devices

Computer-aided design methodology for linearity enhancement of multiwatt GaN HEMT amplifiers using multiple parallel devices

This article presents a design methodology for linearizing GaN HEMT amplifiers based on splitting a large FET into multiple parallel FETs with same...
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Ultra Wide-Band, High-Power, High-Efficiency GaN Amplifier

Ultra Wide-Band, High-Power, High-Efficiency GaN Amplifier

We report a high-performance GaN amplifier operating from 100MHz to 3,000MHz. The best results included 100W output power, 22dB gain with 40% power...
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Broadband High-Voltage/High-Power (HiVP) GaAs MMIC

Broadband High-Voltage/High-Power (HiVP) GaAs MMIC

This paper reports the first MMIC using the High-Voltage/High Power concept with very broadband power performance. This GaAs MMIC power amplifier h...
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The High Voltage/High Power FET

The High Voltage/High Power FET

A new device configuration is presented: The High-Voltage/High-Power device (HiVP). This original configuration can dramatically improve the power ...
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